Nonlinear conductivity of quasi-one-dimensional layered compound TiS3GORLOVA, I. G; ZYBTSEV, S. G; POKROVSKII, V. Ya et al.Physica. B, Condensed matter. 2012, Vol 407, Num 11, pp 1707-1710, issn 0921-4526, 4 p.Conference Paper

Rigid ion model of high field transport in GaN : The physics of III-V nitridesYAMAKAWA, Shinya; AKIS, Richard; FARALLI, Nicolas et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 17, issn 0953-8984, 174208.1-174208.16Article

Theoretical calculations of nonlinear electronic transport behavior in III-nitrides : GaN and AINRODRIGUES, Cloves G; VASCONCELLOS, Aurea R; LUZZI, Roberto et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 2, pp 417-425, issn 0370-1972, 9 p.Article

Unidirectional Current Flow Due to Nonlinear Bulk Conduction under Trap Density GradientWATANABE, Yukio.Journal of the Physical Society of Japan. 2009, Vol 78, Num 10, issn 0031-9015, 104712.1-104712.10Article

The nonlinear carrier transport in a bipolar semiconductor sampleKONIN, A.Journal of physics. Condensed matter (Print). 2008, Vol 20, Num 33, issn 0953-8984, 335209.1-335209.4Article

Identification of conduction and hot electron property in ZnS, ZnO and SiO₂JINZHAO HUANG; ZHENG XU; SULING ZHAO et al.Physica. B, Condensed matter. 2007, Vol 394, Num 1, pp 115-117, issn 0921-4526, 3 p.Article

Thermally stimulated currents in amorphous solids due to complex heating regimesTOMASZEWICZ, W.Journal of non-crystalline solids. 2006, Vol 352, Num 40-41, pp 4214-4220, issn 0022-3093, 7 p.Conference Paper

Dielectric behavior and a.c. resistivity study of humidity sensing ferritesLIPARE, A. Y; VASAMBEKAR, P. N; VAINGANKAR, A. S et al.Materials chemistry and physics. 2003, Vol 81, Num 1, pp 108-115, issn 0254-0584, 8 p.Article

Nonlinear current-voltage characteristics of ilmenite-hematite ceramicFENG ZHOU; KOTRU, Sushma; PANDEY, R. K et al.Materials letters (General ed.). 2003, Vol 57, Num 13-14, pp 2104-2109, issn 0167-577X, 6 p.Article

Low-voltage varistors based on La-Ca-Mn-O ceramicsSURTHI, Shyam; KOTRU, Sushma; PANDEY, R. K et al.Materials letters (General ed.). 2002, Vol 57, Num 4, pp 887-893, issn 0167-577X, 7 p.Article

Nonlinear electrical and dielectric properties of (Ca, Ta)-doped TiO₂ varistorsWANG, W. Y; ZHANG, D. F; XU, T et al.Physica status solidi. A. Applied research. 2002, Vol 194, Num 1, pp 118-128, issn 0031-8965, 11 p.Article

Hot electron relaxation: An exactly solved modelSCHÖNHAMMER, K.Physica status solidi. B. Basic research. 2002, Vol 234, Num 1, pp 398-401, issn 0370-1972, 4 p.Article

C and Si impurity atoms on a GaAs(001) surfaceSAWAMURA, Akitaka; YAO, Hideki; KAJI, Mikio et al.Materials transactions - JIM. 2001, Vol 42, Num 3, pp 397-398, issn 0916-1821Article

The Grenoble High Magnetic Field Laboratory as a user facilityDEBRAY, F; JONGBLOETS, H; JOSS, W et al.Physica. B, Condensed matter. 2001, Vol 294-95, pp 523-528, issn 0921-4526Conference Paper

Electron relaxation in SiO2 under strong laser field using high order harmonics generationMARTIN, P; MERDJI, H; MEYNADIER, P et al.Laser physics. 2000, Vol 10, Num 1, pp 270-277, issn 1054-660XConference Paper

Nonlinear electrical properties of zinc oxide ceramics with B₂O₃ additionsGLOT, A. B; MAZURIK, S. V.Inorganic materials. 2000, Vol 36, Num 6, pp 636-639, issn 0020-1685Article

Magnetic-field induced crossover from Efros-Shklovskii to Mott variable range hopping in Si:(P, B)IQBAL, M; GALIBERT, J; LEOTIN, J et al.Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic properties. 1999, Vol 79, Num 10, pp 1591-1601, issn 1364-2812Article

Electronic characterization of single grain boundary in ZnO:Pr varistorsMUKAE, K; TANAKA, A.Advances in science and technology. 1999, pp E103-E112, isbn 88-86538-14-6, 5VolConference Paper

Nucleation process of a filamentary current during impact ionization avalanche in n-GaAsAOKI, K; FUKUI, S.Journal of the Physical Society of Japan. 1998, Vol 67, Num 4, pp 1106-1109, issn 0031-9015Article

A new critical point in the non-linear conductivity due to variable-range hopping in SiSTEFANYIT, P; ZAMMIT, C. C; FOZOONI, P et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 4, pp 881-888, issn 0953-8984Article

Conductivity measurements of a metallic diffuse-fringe film percolation systemYE, G.-X; ZHANG, Q.-R; FENG, C.-M et al.Physica status solidi. A. Applied research. 1996, Vol 157, Num 1, pp 49-56, issn 0031-8965Article

Possible generation of transient THz electronic drift effects in a semiconductor by a high electric fieldFILIP, V. M; PLAVITU, C. N.Journal de physique. I. 1996, Vol 6, Num 3, pp 403-412, issn 1155-4304Article

Reversible non-linear electrical switching in CdTeS-doped glassDE PAIVA, J. A. C; SOMBRA, A. S. B; MEDEIROS NETO, J. A et al.Journal of materials science. 1996, Vol 31, Num 13, pp 3601-3604, issn 0022-2461Article

Fourier transient grating in semiconductors with nonlinear carrier recombinationGRIVICKAS, V; NOREIKA, D; LINNROS, J et al.Semiconductor science and technology. 1996, Vol 11, Num 11, pp 1725-1733, issn 0268-1242Article

Hot-electron magneto-transport in narrow-gap semiconductors in quantum magnetic fieldWENG, X. M; LEI, X. L.Physica status solidi. B. Basic research. 1995, Vol 191, Num 1, pp 183-188, issn 0370-1972Article